MS23P05 单 FET、MOSFET_崇明集团（香港）国际_CHONGMING GROUP(HK)_闪存IC芯片_可编程IC芯片_计算机IC芯片_LED驱动器IC_电源管理IC_集成电路芯片

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数量

验证码

类型	描述
制造商	Bruckewell
系列	SOT-23
包装	卷带式 (TR)
产品状态	ACTIVE
包装/箱	TO-236-3, SC-59, SOT-23-3
安装类型	Surface Mount
工作温度	-55°C ~ 150°C (TJ)
技术	MOSFET (Metal Oxide)
场效应管类型	P-Channel
电流 - 连续漏极 (Id) @ 25°C	3.1A (Ta)
Rds On（最大）@Id、Vgs	55mOhm @ 3A, 10V
功耗（最大）	1W (Ta)
Vgs(th)（最大值）@Id	1.2V @ 250µA
供应商设备包	SOT-23
驱动电压（最大导通电阻、最小导通电阻）	1.8V, 10V
Vgs（最大）	±12V
漏源电压 (Vdss)	20 V
栅极电荷 (Qg)（最大值）@Vgs	9.7 nC @ 4.5 V
输入电容 (Ciss)（最大值）@Vds	686 pF @ 15 V

类型

描述

制造商

Bruckewell

系列

SOT-23

包装

卷带式 (TR)

产品状态

ACTIVE

包装/箱

TO-236-3, SC-59, SOT-23-3

安装类型

Surface Mount

工作温度

-55°C ~ 150°C (TJ)

技术

MOSFET (Metal Oxide)

场效应管类型

P-Channel

电流 - 连续漏极 (Id) @ 25°C

3.1A (Ta)

Rds On（最大）@Id、Vgs

55mOhm @ 3A, 10V

功耗（最大）

1W (Ta)

Vgs(th)（最大值）@Id

1.2V @ 250µA

供应商设备包

SOT-23

驱动电压（最大导通电阻、最小导通电阻）

1.8V, 10V

Vgs（最大）

±12V

漏源电压 (Vdss)

20 V

栅极电荷 (Qg)（最大值）@Vgs

9.7 nC @ 4.5 V

输入电容 (Ciss)（最大值）@Vds

686 pF @ 15 V